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M25PE10-VMN6TG 参数 Datasheet PDF下载

M25PE10-VMN6TG图片预览
型号: M25PE10-VMN6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 1和2兆位,低电压,页面可擦除串行闪存产品与字节变性, 33兆赫的SPI总线,标准引脚输出 [1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 37 页 / 483 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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M25PE20
M25PE10
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories
with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out
FEATURES SUMMARY
Industrial Standard SPI Pin-out
1 or 2 Mbit of Page-Erasable Flash Memory
Page Write (up to 256 Bytes) in 11ms (typical)
Page Program (up to 256 Bytes) in 1.2ms
(typical)
Page Erase (256 Bytes) in 10ms (typical)
Sector Erase (512 Kbit)
2.7 to 3.6V Single Supply Voltage
SPI Bus Compatible Serial Interface
33MHz Clock Rate (maximum)
Deep Power-down Mode 1µA (typical)
Electronic Signature
– JEDEC Standard Two-Byte Signature
(8012h for M25PE20
8011h for M25PE10)
More than 100,000 Write Cycles
More than 20 Year Data Retention
Hardware Write Protection of the Top Sector
(64KB)
Packages
– ECOPACK® (RoHS compliant)
Figure 1. Packages
VDFPN8 (MP)
6x5mm (MLP8)
8
1
SO8N (MN)
150 mil width
October 2005
1/37