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M25P16-VMW6TG 参数 Datasheet PDF下载

M25P16-VMW6TG图片预览
型号: M25P16-VMW6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位,低电压,串行闪存,具有50 MHz SPI总线接口 [16 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface]
分类和应用: 闪存存储
文件页数/大小: 55 页 / 488 K
品牌: STMICROELECTRONICS [ ST ]
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DC and AC parameters  
M25P16  
(1)  
Table 17. AC characteristics (25 MHz operation, Grade 3) (continued)  
Test conditions specified in Table 10 and Table 12  
Symbol  
Alt.  
Parameter  
Sector Erase cycle time  
Bulk Erase cycle time  
Min.  
Typ.  
Max.  
Unit  
(6)  
tSE  
0.8  
17  
3
s
s
(6)  
tBE  
40  
1. Preliminary data.  
2. tCH + tCL must be greater than or equal to 1/ fC  
3. Value guaranteed by characterization, not 100% tested in production.  
4. Expressed as a slew-rate.  
5. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.  
6. Typical values given for TA = 85 °C.  
7. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.  
Figure 23. Serial input timing  
tSHSL  
S
tCHSL  
tSLCH  
tCHSH  
tSHCH  
C
tDVCH  
tCHCL  
tCHDX  
tCLCH  
MSB IN  
LSB IN  
D
Q
High Impedance  
AI01447C  
44/55  
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