DC and AC parameters
Table 16.
M25P16
(1)
AC characteristics (Grade 6, T9HX (0.11µm) technology) (continued)
Applies only to products made with T9HX (0.11µm) Technology, identified with Process digit
“4”(2)
Test conditions specified in Table 10 and Table 12
Symbol Alt.
Parameter
Min.
Typ.(3)
Max. Unit
Page Program cycle time (256 Bytes)
0.64
Page Program cycle time (n Bytes, where n = 1
to 4)
0.01
(8)
tPP
5
ms
Page Program cycle time (n Bytes, where n = 5
to 256)
int(n/8) × 0.02(9)
tSE
tBE
Sector erase cycle Time
Bulk erase cycle Time
0.6
13
3
s
s
40
1. Preliminary data.
2. Details of how to find the Technology Process in the marking are given in AN1995, see also Section 12:
Part numbering.
3. Typical values given for TA = 25°C.
4. tCH + tCL must be greater than or equal to 1/ fC
5. Value guaranteed by characterization, not 100% tested in production.
6. Expressed as a slew-rate.
7. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
8. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are
obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. (1 ≤n ≤
256)
9. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
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