Electrical characteristics
IRF630 - IRF630FP
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max rating,
V
DS
= Max rating @125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 4.5A
2
3
0.35
Min.
200
1
50
±
100
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
4
0.40
Table 5.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on Delay Time
Rise Time
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 4.5A
Min.
3
Typ.
4
540
90
35
10
15
31
7.5
9
700
120
50
14
20
45
Max.
Unit
S
pF
pF
pF
ns
ns
nC
nC
nC
V
DS
=25V, f=1 MHz, V
GS
=0
V
DD
= 100V, I
D
= 4.5A,
R
G
= 4.7Ω, V
GS
= 10V
V
DD
=160V, I
D
= 9A
V
GS
=10V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/14
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