IRF630 - IRF630FP
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM(2)
P
TOT
dv/dt
(3)
V
ISO
T
J
T
stg
Absolute maximum ratings
Value
Parameter
TO-220
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20 kΩ)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Peak diode recovery voltage slope
Insulation winthstand voltage (DC)
Operating junction temperature
Storage temperature
--
-65 to 150
150
9
5.7
36
75
0.6
5
2000
200
200
± 20
9
(1)
5.7
(1)
36
(1)
30
0.24
TO-220FP
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
Unit
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD
≤
di/dt
≤
9A,
300A/µs,
VDD
≤
V(BR)DSS, Tj
≤
TJMAX
Table 2.
Symbol
R
thj-case
R
thj-a
Rthc-sink
T
l
Thermal data
Value
Parameter
TO-220
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance case-sink typ
Maximum lead temperature for soldering
purpose
1.67
62.5
0.5
300
TO-220FP
4.17
°C/W
°C/W
°C/W
°C
Unit
Table 3.
Symbol
I
AR
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
9
160
Unit
A
mJ
3/14
STMICROELECTRONICS [ STMICROELECTRONICS ]
