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IRF520 参数 Datasheet PDF下载

IRF520图片预览
型号: IRF520
PDF下载: 下载PDF文件 查看货源
内容描述: N - 沟道增强型功率MOS晶体管 [N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS]
分类和应用: 晶体晶体管
文件页数/大小: 9 页 / 184 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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IRF520/FI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
©
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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