IRF520/FI
THERMAL DATA
TO-220
R
thj-cas e
R
thj- amb
R
th c-s
T
l
Thermal Resistance Junction-case
Max
2.14
62.5
0.5
300
ISOWATT220
4.29
o
o
o
C/W
C/W
C/W
o
C
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
I
A R
E
AS
E
AR
I
A R
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
D D
= 25 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
o
Max Value
10
36
9
7
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25 C unless otherwise specified)
OFF
Symbol
V
( BR)DSS
I
DS S
I
G SS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I
D
= 250
µA
V
G S
= 0
Min.
100
250
1000
±
100
Typ.
Max.
Unit
V
µA
µA
nA
Zero Gate Voltage
V
DS
= Max Rating
Drain Current (V
GS
= 0) V
DS
= Max Rating x 0.8
Gate-body Leakage
Current (V
D S
= 0)
V
GS
=
±
20 V
T
c
= 125 C
o
ON (∗)
Symbol
V
G S(th)
R
DS( on)
I
D( on)
Parameter
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 10V
Test Conditions
I
D
= 250
µA
I
D
= 5 A
V
G S
= 10 V
10
Min.
2
Typ.
2.9
0.23
Max.
4
0.27
Unit
V
Ω
A
V
DS
> I
D( on)
x R
D S(on) max
DYNAMIC
Symbol
g
fs
(∗)
C
iss
C
oss
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
> I
D( on)
x R
D S(on) max
V
DS
= 25 V
f = 1 MHz
I
D
= 5 A
V
G S
= 0
Min.
2.7
Typ.
4.5
330
90
25
450
120
40
Max.
Unit
S
pF
pF
pF
2/9
STMICROELECTRONICS [ STMICROELECTRONICS ]
