IRF520
IRF520FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
IRF520
IRF520FI
s
s
s
s
s
s
s
V
DSS
100 V
100 V
R
DS( on)
< 0.27
Ω
< 0.27
Ω
I
D
10 A
7A
TYPICAL R
DS(on)
= 0.23
Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175
o
C OPERATING TEMPERATURE
TO-220
3
1
2
1
2
3
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
D S
V
DG R
V
GS
I
D
I
D
I
D M
(•)
P
tot
V
ISO
T
stg
T
j
Parameter
IRF520
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (cont.) at T
c
= 25
o
C
Drain Current (cont.) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
10
7
40
70
0.47
-65 to 175
175
100
100
±
20
7
5
40
35
0.23
2000
Value
IRF520FI
V
V
V
A
A
A
W
W/
o
C
V
o
o
Unit
C
C
(•) Pulse width limited by safe operating area
June 1993
1/9
STMICROELECTRONICS [ STMICROELECTRONICS ]
