Characteristics
BTA12, BTB12, T12xx
1
Table 2.
Symbol
Characteristics
Absolute maximum ratings
Parameter
RMS on-state current
(full sine wave)
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25° C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
Non repetitive surge peak off-state
voltage
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
I
2
PAK / D
2
PAK /
TO-220AB
TO-220AB Ins.
F = 50 Hz
F = 60 Hz
t
p
= 10 ms
F = 120 Hz
t
p
= 10 ms
t
p
= 20 µs
T
j
= 125° C
T
j
= 25° C
T
j
= 125° C
T
j
= 125° C
I
TSM
I
2
t
dI/dt
T
c
= 105° C
T
c
= 90° C
t = 20 ms
t = 16.7 ms
120
A
126
78
50
V
DRM
/V
RRM
+ 100
4
1
- 40 to + 150
- 40 to + 125
A
²
s
A/µs
V
A
W
°C
Value
Unit
I
T(RMS)
12
A
V
DSM
/V
RSM
I
GM
P
G(AV)
T
stg
T
j
Table 3.
Electrical characteristics (T
j
= 25°C, unless otherwise specified)
Snubberless and logic level (3 quadrants)
T12xx
Symbol
I
GT (1)
V
GT
V
GD
I
H (2)
I
L
dV/dt
Test conditions
Quadrant
T1210
V
D
= 12 V
R
L
= 30
Ω
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125° C
I
T
= 100 mA
I - III
I
G
= 1.2 I
GT
MAX.
II
MIN.
30
40
6.5
MIN.
2.9
6.5
12
60
500
80
1000
15
20
3.5
1
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
15
25
35
50
50
70
10
T1235
35
T1250
50
1.3
0.2
10
10
TW
5
BTA12 / BTB12
Unit
SW
10
CW
35
BW
50
mA
V
V
15
25
30
40
6.5
2.9
6.5
12
A/ms
35
50
60
500
50
70
mA
80
1000
V/µs
mA
V
D
= 67 %V
DRM
gate open
T
j
= 125° C
(dV/dt)c = 0.1 V/µs
T
j
= 125° C
(dI/dt)c
(dV/dt)c = 10 V/µs
T
j
= 125° C
Without snubber
T
j
= 125° C
1. Minimum I
GT
is guaranted at 5% of I
GT
max
2. for both polarities of A2 referenced to A1
2/12
STMICROELECTRONICS [ STMICROELECTRONICS ]
