Characteristics
BTA12, BTB12, T12xx
Figure 1.
P(W)
16
14
12
10
8
6
4
2
0
0
1
2
Maximum power dissipation versus Figure 2.
RMS on-state current (full cycle)
I
T(RMS)
(A)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
8
9
10
11
12
0
RMS on-state current versus case
temperature (full cycle)
BTB / T12
BTA
I
T(RMS)
(A)
3
4
5
6
7
T
C
(°C)
25
50
75
100
125
Figure 3.
RMS on-state current versus
ambient temperature (printed
circuit board FR4, copper
thickness: 35µm) (full cycle)
Figure 4.
Relative variation of thermal
impedance versus pulse duration
I
T(RMS)
(A)
3.5
3.0
2.5
D
2
PAK
(S=1cm
2
)
K=[Z
th
/R
th
]
1E+0
Z
th(j-c)
Z
th(j-a)
2.0
1E-1
1.5
1.0
0.5
T
C
(°C)
0.0
0
25
50
75
100
125
1E-2
1E-3
1E-2
1E-1
t
p
(s)
1E+0
1E+1
1E+2
5E+2
Figure 5.
I
TM
(A)
100
T
j
max.
V
to
= 0.85V
R
d
= 35 m
Ω
On-state characteristics (maximum Figure 6.
values)
I
TSM
(A)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
3.5
4.0
4.5
5.0
Surge peak on-state current versus
number of cycles
t=20ms
T
j
= T
j
max.
Non repetitive
T
j
initial=25°C
One cycle
10
T
j
= 25°C.
Repetitive
T
C
=90°C
V
TM
(V)
1
0.5
1.0
1.5
2.0
2.5
3.0
Number of cycles
1
10
100
1000
4/12
STMICROELECTRONICS [ STMICROELECTRONICS ]
