Characteristics
1N5817, 1N5818, 1N5819
Figure 7.
Non repetitive surge peak forward Figure 8.
current versus overload duration
(maximum values) (1N5817/1N5818)
8
7
6
Ta=25°C
Ta=75°C
Non repetitive surge peak forward
current versus overload duration
(maximum values) (1N5819)
10
9
8
7
6
5
4
3
2
1
IM(A)
IM(A)
5
4
3
Ta=25°C
Ta=75°C
Ta=100°C
I
M
t
2
I
M
Ta=100°C
d
=0.5
t(s)
1E-2
1E-1
1E+0
1
0
1E-3
t
0
1E-3
d
=0.5
t(s)
1E-2
1E-1
1E+0
Figure 9.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 10. Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
500
F=1MHz
Tj=25°C
1.0
0.8
0.6
0.4
Zth(j-a)/Rth(j-a)
(epoxy printed circuit board,
e(Cu) = 35 mm, recommended pad layout)
200
1N5817
δ
= 0.5
100
1N5818
50
δ
= 0.2
1N5819
T
0.2
δ
= 0.1
Single pulse
20
tp(s)
1E+1
δ
=tp/T
tp
VR(V)
10
1
2
5
10
20
40
0.0
1E-1
1E+0
1E+2
1E+3
Figure 11. Reverse leakage current versus
reverse voltage applied (typical
values) (1N5817/1N5818)
1E+1
IR(mA)
Tj=125°C
1N5818
1N5817
Figure 12. Reverse leakage current versus
reverse voltage applied (typical
values) (1N5819)
1E+1
IR(mA)
Tj=125°C
1E+0
Tj=100°C
1E+0
Tj=100°C
1E-1
1E-1
1E-2
Tj=25°C
1E-2
Tj=25°C
VR(V)
1E-3
0
5
10
15
20
25
30
1E-3
0
5
10
15
VR(V)
20
30
35
40
4/7
Doc ID 6262 Rev 5
STMICROELECTRONICS [ STMICROELECTRONICS ]
