Characteristics
1N5817, 1N5818, 1N5819
1
Characteristics
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
stg
T
j
dV/dt
1.
Absolute ratings (limiting values)
Value
Parameter
1N5817
Repetitive peak reverse voltage
Forward rms current
Average forward
current
Surge non repetitive
forward current
Repetitive peak
avalanche power
T
L
= 125 °C,
δ
= 0.5
t
p
= 10 ms Sinusoidal
t
p
= 1 µs, T
j
= 25 °C
1200
20
1N5818
30
10
1
25
1200
-65 to + 150
150
10000
900
1N5819
40
V
A
A
A
W
°C
°C
V/µs
Unit
Storage temperature range
Maximum operating junction temperature
(1)
Critical rate of rise of reverse voltage
1
dPtot <
condition to avoid thermal runaway for a diode on its own heatsink.
Rth(j-a)
dTj
Table 3.
Symbol
R
th (j-a)
R
th (j-l)
Thermal resistances
Parameter
Junction to ambient
Junction to lead
Lead length = 10 mm
Lead length = 10 mm
Value
100
45
Unit
°C/W
°C/W
Table 4.
Symbol
I
R (1)
Static electrical characteristics
Parameter
Reverse leakage
current
Forward voltage drop
Tests conditions
T
j
= 25 °C
T
j
= 100 °C
T
j
= 25 °C
T
j
= 25 °C
V
R
= V
RRM
I
F
= 1 A
I
F
= 3 A
1N5817
0.5
10
0.45
0.75
1N5818
0.5
10
0.50
0.80
1N5819
0.5
10
0.55
0.85
Unit
mA
mA
V
V
V
F
(1)
1. Pulse test : t
p
= 380 µs,
δ
< 2%
To evaluate the conduction losses use the following equations :
P = 0.3 x I
F(AV)
+ 0.090 I
F2(RMS )
for 1N5817 / 1N5818
P = 0.3 x I
F(AV)
+ 0.150 I
F2(RMS )
for 1N5819
2/7
Doc ID 6262 Rev 5
STMICROELECTRONICS [ STMICROELECTRONICS ]
