1N5817, 1N5818, 1N5819
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(1N5817/1N5818)
PF(av)(W)
0.7
d
= 0.1
d
= 0.05
d
= 0.2
d
= 0.5
Average forward power dissipation
versus average forward current
(1N5819)
d
= 0.1
d
= 0.05
d
=1
PF(av)(W)
0.6
0.5
0.4
0.3
0.6
0.5
d
=1
d
= 0.2
d
= 0.5
0.4
0.3
0.2
T
0.2
tp
T
0.1
IF(av) (A)
d
=tp/T
0.1
IF(av) (A)
d
=tp/T
tp
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Figure 3.
Average forward current versus
ambient temperature
(δ = 0.5) (1N5817/1N5818)
Figure 4.
Average forward current versus
ambient temperature
(δ = 0.5) (1N5819)
IF(av)(A)
1.2
Rth(j-a)=Rth(j-l)=45°C/W
1.2
1.0
Rth(j-a)=100°C/W
IF(av)(A)
Rth(j-a)=Rth(j-l)=45°C/W
1.0
0.8
0.6
0.4
T
0.8
0.6
0.4
T
Rth(j-a)=100°C/W
0.2
d
=tp/T
tp
0.2
Tamb(°C)
50
75
100
125
150
0.0
0
d
=tp/T
tp
Tamb(°C)
50
75
100
125
150
0.0
0
25
25
Figure 5.
Normalized avalanche power
derating versus pulse duration
Figure 6.
Normalized avalanche power
derating versus junction
temperature
P
ARM
(tp)
P
ARM
(1 µs)
1
P
ARM
(Tj)
P
ARM
(25 °C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
0.1
1
t
p
(µs)
10
100
1000
T
j
(°C)
0
25
50
75
100
125
150
Doc ID 6262 Rev 5
3/7
STMICROELECTRONICS [ STMICROELECTRONICS ]
