STN9926
Dual N Channel Enhancement Mode MOSFET
5A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=250uA
VDS=VGS,ID=250 uA
20
V
V
Gate Threshold Voltage
Gate Leakage Current
0.4
1.0
±
±
VDS=0V,VGS= 12V
100
1
nA
VDS=20V,VGS=0V
VDS=20V,VGS=0V
IDSS
Zero Gate Voltage Drain
Current
℃
TJ=55
uA
A
5
On-State Drain Current
ID(on)
V
DS≦5V,VGS=4.5V
6
=
VGS 4.5V, ID=5.0A
VGS=2.5V, ID=4.0A
VGS=1.8V,ID=2.8A
0.004 0.050
0.055 0.065
0.075 0.090
Ω
Drain-source On-Resistance
RDS(on)
Forward Tran Conductance
Diode Forward Voltage
VDS=5.0V,ID=3.6A
IS=1.6A,VGS=0V
10
S
V
gfs
VSD
0.8 1.2
Dynamic
Total Gate Charge
Gate-Source Charge
Qg
Qgs
Qgd
4.8 8.0
1.0
VDS=6.0V,VGS=4.5V
≡
ID 2.8A
nC
pF
Gate-Drain Charge
Input Capacitance
1.0
Ciss
Coss
Crss
485
85
VDS=6.0V,VGS=0V
f=1MHz
Output Capacitance
Reverse TransferCapacitance
40
12
10
30
15
20
20
36
17
td(on)
Turn-On Time
Turn-Off Time
Ω
VDD=15V,RL=15
tr
ID=1A,VGEN=10V
nS
Ω
RG=6
td(off)
tf
3
120 Bentley Square, Mountain View, Ca 94040 USA
www.syonsontech.com
Copyright © 2007, Stanson Corp.
STN9926 2007. V1
STANSON [ STANSON TECHNOLOGY ]
