STN9926
Dual N Channel Enhancement Mode MOSFET
5A
DESCRIPTION
The STN9926 is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer
power management and other battery powered circuits where high-side switching .
FEATURE
PIN CONFIGURATION
SOP-8
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20V/5.0A, RDS(ON) = 50mΩ
@VGS = 4.5V
20V/4.0A, RDS(ON) = 65mΩ
@VGS = 2.5V
20V/2.8A, RDS(ON) = 90mΩ
@VGS = 1.8V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
PART MARKING
SOP-8
ORDERING INFORMATION
Part Number
Package
SOP-8
Part Marking
STN9926
STN9926S8RG
STN9926S8TG
SOP-8
STN9926
※ Process Code : A ~ Z ; a ~ z
※ STN9926S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
※ STN9926S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.syonsontech.com
Copyright © 2007, Stanson Corp.
STN9926 2007. V1
STANSON [ STANSON TECHNOLOGY ]
