N Channel Enchancement Mode MOSFET
60V/60A
ST6006S / ST6006
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter Symbol Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=10uA
60
VGS(th) VDS=VGS,ID=50uA 1.0
V
V
Gate Threshold Voltage
Gate Leakage Current
3.0
IGSS
VDS=0V,VGS=20V
100 nA
VDS=60V,VGS=0V
VDS=20V,VGS=0V
1
Zero Gate Voltage Drain Current
uA
50
IDSS
℃
TJ=125
VDS=60V,VGS=0V
℃
TJ=175
On-State Drain Current
ID(on)
VDS=5V,VGS=10V
60
A
Drain-source On-Resistance
VGS=10V,ID=30A
VGS=10V,ID=30A
12
24
16
30
RDS(on)
Ω
m
℃
TJ=125
VGS=10V,ID=30A
31
37
19
℃
TJ=175
VGS=5V,ID=30A
VDS=15V,ID=30A
14
49
Forward Transconductance
Diode Forward Voltage
Dynamic
S
gfs
VSD
IF=60A,VGS=0V
1.6
60
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS=30V,VGS=10V
39
12
10
2000
400
115
12
nC
≡
ID 60A
VDS=25V,VGS=0V
F=1MHz
pF
nS
25
60
td(on)
tr
td(off)
tf
Ω
VDD=10V,RL=5.5
36
ID=3.6A,VGEN=4.5V
Turn-Off Time
34
10
60
25
Ω
RG=6
Page3
STANSON [ STANSON TECHNOLOGY ]
