N Channel Enchancement Mode MOSFET
60V/60A
ST6006S / ST6006
ORDERING INFORMATION
Part Number
Package
Part Marking
ST6006T220TG
ST6006T220RG
TO-220-3L
TO-263-2L
ST6006D
ST6006
℃
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
ID
Typical
60
Unit
V
+/-20
V
60
39
A
℃ TA=25℃
Continuous Drain Current (TJ=150 )
℃
TA=70
Pulsed Drain Current
IDM
IS
120
A
A
Continuous Source Current (Diode Conduction)
60
Power Dissipation
PD
120
3.7
W
TA=25℃
℃
TA=70
Operation Junction Temperature
Storgae Temperature Range
TJ
150
℃
℃
℃
TSTG
-55/150
Thermal Resistance-Junction to Ambient
Rθ
40
JA
/W
62.5
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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