N Channel Enchancement Mode MOSFET
60V/60A
ST6006S / ST6006
DESCRIPTION
The ST6006 is the N-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This ST6006 is densigned to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters
and power motor controls, these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and offer additional safetv
margin against unexpected voltage transients.
PIN CONFIGURATION
APPLICATIONS
TO-220-3L
ST6006
TO-263-2L
ST6006S
z Power Supplies
z Converters
z Power Motor controls
z Bridge Circuit
FEATURE
z 20V/2.8A, RDS(ON) = 85m-ohm
@VGS = 4.5V
z 20V/2.4A, RDS(ON) = 115m-ohm
@VGS = 2.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and
maximum
DC current capability
z SOT-23-3L package design
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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STANSON [ STANSON TECHNOLOGY ]
