ST2305A
P Channel Enhancement Mode MOSFET
-3.5A
DESCRIPTION
ST2305A is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
FEATURE
PIN CONFIGURATION
SOT-23-3L
z
z
z
z
z
z
-15V/-3.5A, RDS(ON) = 45m-ohm (Typ.)
@VGS = -4.5V
-15V/-3.0A, RDS(ON) = 55m-ohm
@VGS = -2.5V
-15V/-2.0A, RDS(ON)= 90m-ohm
@VGS=-1.8V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
3
D
G
1
S
2
SOT-23-3L package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
3
05YA
1
2
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST2305AS23RG
SOT-23-3L
05YA
※ Process Code : A ~ Z ; a ~ z
※ ST2305AS23RG
S : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2305A 2005. V1
STANSON [ STANSON TECHNOLOGY ]
