SGA-8343X Reliability Qualification Report
I. Qualification Overview
The SGA-8343X family of products has demonstrated reliable operation by passing all
qualification testing in our product qualification test plan. The “X’ designates a lead-free
lead frame using Tin plated leads. The SGA-8343X has been subject to stresses such as
humidity (autoclave), extreme hot and cold environments (temperature cycling), moisture
sensitivity (MSL-1 and solder reflow testing), and has demonstrated reliable
performance.
II. Introduction
Sirenza Microdevices’ SGA-8343X is a high performance Silicon Germanium
Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz.
The SGA-8343X is optimized for 3V operation but can be biased at 2V for low voltage
battery operated systems. The device provides high gain, low NF, and excellent linearity
at a low cost. It can be operated at very low bias currents in applications where high
linearity is not required.
III. Fabrication Technology
These amplifiers are manufactured using a Silicon Germanium Heterojunction Bipolar
Transistor (HBT) technology. This self-aligned emitter, double poly HBT process has
been in production by our foundry since 1998. The process has been successfully used
for a wide range of RFIC products including GSM PAs, DECT front end transceivers,
LNAs & VCOs. This process offers comparable performance to GaAs HBTs with the
added advantages of mature and high producible Silicon wafer processing.
IV. Package Type
The SGA-8343X power amplifier is packaged in a plastic encapsulated SOT-343
package that is assembled using a highly reproducible automated assembly process.
The die is mounted using an industry standard thermally and electrically conductive silver
epoxy. The SOT-343 is a similar package differing only by having two fewer leads than
the SOT-363.
Figure 1: Image of SOT-343 Encapsulated Plastic Package
STANFORD [ STANFORD MICRODEVICES ]
