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SST39VF512-70-4C-WH 参数 Datasheet PDF下载

SST39VF512-70-4C-WH图片预览
型号: SST39VF512-70-4C-WH
PDF下载: 下载PDF文件 查看货源
内容描述: 512千位/ 1兆位/ 2兆位/ 4兆位( X8 )多用途闪存 [512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 24 页 / 283 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash  
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040  
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040  
Data Sheet  
TABLE 5: DC OPERATING CHARACTERISTICS  
VDD = 3.0-3.6V FOR SST39LF512/010/020/040 AND 2.7-3.6V FOR SST39VF512/010/020/040  
Limits  
Symbol Parameter  
Min  
Max Units Test Conditions  
Address input=VIL/VIH, at f=1/TRC Min  
IDD  
Power Supply Current  
VDD=VDD Max  
Read  
20  
20  
15  
1
mA  
mA  
µA  
µA  
µA  
V
CE#=OE#=VIL, WE#=VIH, all I/Os open  
CE#=WE#=VIL, OE#=VIH  
CE#=VIHC, VDD=VDD Max  
VIN=GND to VDD, VDD=VDD Max  
VOUT=GND to VDD, VDD=VDD Max  
VDD=VDD Min  
Write  
ISB  
Standby VDD Current  
Input Leakage Current  
Output Leakage Current  
Input Low Voltage  
Input High Voltage  
Input High Voltage (CMOS)  
Output Low Voltage  
Output High Voltage  
ILI  
ILO  
10  
0.8  
VIL  
VIH  
VIHC  
VOL  
VOH  
0.7VDD  
V
VDD=VDD Max  
VDD-0.3  
V
VDD=VDD Max  
0.2  
V
IOL=100 µA, VDD=VDD Min  
IOH=-100 µA, VDD=VDD Min  
VDD-0.2  
V
T5.2 395  
TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS  
Symbol  
Parameter  
Minimum  
100  
Units  
1
TPU-READ  
Power-up to Read Operation  
Power-up to Program/Erase Operation  
µs  
µs  
1
TPU-WRITE  
100  
T6.1 395  
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.  
TABLE 7: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)  
Parameter  
Description  
Test Condition  
VI/O = 0V  
Maximum  
1
CI/O  
I/O Pin Capacitance  
Input Capacitance  
12 pF  
6 pF  
1
CIN  
VIN = 0V  
T7.0 395  
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.  
TABLE 8: RELIABILITY CHARACTERISTICS  
Symbol  
Parameter  
Endurance  
Data Retention  
Latch Up  
Minimum Specification  
Units  
Test Method  
1
NEND  
10,000  
100  
Cycles JEDEC Standard A117  
1
TDR  
Years  
mA  
JEDEC Standard A103  
JEDEC Standard 78  
1
ILTH  
100 + IDD  
T8.2 395  
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.  
©2001 Silicon Storage Technology, Inc.  
S71150-03-000 6/01 395  
8
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