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SST39VF512-70-4C-WH 参数 Datasheet PDF下载

SST39VF512-70-4C-WH图片预览
型号: SST39VF512-70-4C-WH
PDF下载: 下载PDF文件 查看货源
内容描述: 512千位/ 1兆位/ 2兆位/ 4兆位( X8 )多用途闪存 [512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 24 页 / 283 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash  
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040  
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040  
Data Sheet  
TABLE 2: PIN DESCRIPTION  
Symbol  
Pin Name  
Functions  
AMS1-A0  
Address Inputs  
To provide memory addresses. During Sector-Erase AMS-A12 address lines will select the  
sector. During Block-Erase AMS-A16 address lines will select the block.  
DQ7-DQ0  
Data Input/output  
To output data during Read cycles and receive input data during Write cycles.  
Data is internally latched during a Write cycle.  
The outputs are in tri-state when OE# or CE# is high.  
CE#  
OE#  
WE#  
VDD  
Chip Enable  
Output Enable  
Write Enable  
Power Supply  
To activate the device when CE# is low.  
To gate the data output buffers.  
To control the Write operations.  
To provide power supply voltage:  
3.0-3.6V for SST39LF512/010/020/040  
2.7-3.6V for SST39VF512/010/020/040  
VSS  
NC  
Ground  
No Connection  
Unconnected pins.  
T2.1 395  
1. AMS = Most significant address  
MS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020, and A18 for SST39LF/VF040  
A
TABLE 3: OPERATION MODES SELECTION  
Mode  
Read  
CE#  
VIL  
OE#  
VIL  
WE#  
VIH  
VIL  
DQ  
DOUT  
DIN  
X1  
Address  
AIN  
Program  
Erase  
VIL  
VIH  
VIH  
AIN  
VIL  
VIL  
Sector address,  
XXH for Chip-Erase  
Standby  
VIH  
X
X
VIL  
X
X
X
High Z  
X
X
X
Write Inhibit  
High Z/ DOUT  
High Z/ DOUT  
X
VIH  
Product Identification  
Software Mode  
VIL  
VIL  
VIH  
See Table 4  
T3.4 395  
1. X can be VIL or VIH, but no other value.  
©2001 Silicon Storage Technology, Inc.  
S71150-03-000 6/01 395  
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