512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
TABLE 2: PIN DESCRIPTION
Symbol
Pin Name
Functions
AMS1-A0
Address Inputs
To provide memory addresses. During Sector-Erase AMS-A12 address lines will select the
sector. During Block-Erase AMS-A16 address lines will select the block.
DQ7-DQ0
Data Input/output
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
CE#
OE#
WE#
VDD
Chip Enable
Output Enable
Write Enable
Power Supply
To activate the device when CE# is low.
To gate the data output buffers.
To control the Write operations.
To provide power supply voltage:
3.0-3.6V for SST39LF512/010/020/040
2.7-3.6V for SST39VF512/010/020/040
VSS
NC
Ground
No Connection
Unconnected pins.
T2.1 395
1. AMS = Most significant address
MS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020, and A18 for SST39LF/VF040
A
TABLE 3: OPERATION MODES SELECTION
Mode
Read
CE#
VIL
OE#
VIL
WE#
VIH
VIL
DQ
DOUT
DIN
X1
Address
AIN
Program
Erase
VIL
VIH
VIH
AIN
VIL
VIL
Sector address,
XXH for Chip-Erase
Standby
VIH
X
X
VIL
X
X
X
High Z
X
X
X
Write Inhibit
High Z/ DOUT
High Z/ DOUT
X
VIH
Product Identification
Software Mode
VIL
VIL
VIH
See Table 4
T3.4 395
1. X can be VIL or VIH, but no other value.
©2001 Silicon Storage Technology, Inc.
S71150-03-000 6/01 395
6