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SST39VF016-70-4I-B3K 参数 Datasheet PDF下载

SST39VF016-70-4I-B3K图片预览
型号: SST39VF016-70-4I-B3K
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位/ 16兆位( X8 )多用途闪存 [8 Mbit / 16 Mbit (x8) Multi-Purpose Flash]
分类和应用: 闪存内存集成电路
文件页数/大小: 26 页 / 310 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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8 Mbit / 16 Mbit Multi-Purpose Flash  
SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016  
Data Sheet  
T
BE  
SIX-BYTE CODE FOR BLOCK-ERASE  
5555 5555 2AAA  
5555  
2AAA  
BA  
X
ADDRESS A  
MS-0  
CE#  
OE#  
WE#  
T
WP  
DQ  
7-0  
AA  
55  
SW1  
80  
AA  
55  
SW4  
50  
SW0  
SW2  
SW3  
SW5  
396 ILL F09.2  
Note: The device also supports CE# controlled Block-Erase operation. The WE# and CE# signals are  
interchangeable as long as minimum timings are met. (See Table 14)  
A
A
= Most significant address  
MS  
MS  
= A for SST39LF/VF080 and A for SST39LF/VF016.  
19  
20  
FIGURE 9: WE# CONTROLLED BLOCK-ERASE TIMING DIAGRAM  
T
SE  
SIX-BYTE CODE FOR SECTOR-ERASE  
5555  
2AAA  
5555  
5555  
2AAA  
SA  
X
ADDRESS A  
MS-0  
CE#  
OE#  
WE#  
T
WP  
DQ  
7-0  
AA  
55  
80  
AA  
55  
30  
SW0  
SW1  
SW2  
SW3  
SW4  
SW5  
396 ILL F10.2  
Note: The device also supports CE# controlled Sector-Erase operation. The WE# and CE# signals are  
interchangeable as long as minimum timings are met. (See Table 14)  
A
A
= Most significant address  
MS  
MS  
= A for SST39LF/VF080 and A for SST39LF/VF016.  
19  
20  
FIGURE 10: WE# CONTROLLED SECTOR-ERASE TIMING DIAGRAM  
©2001 Silicon Storage Technology, Inc.  
S71146-03-000 6/01 396  
16  
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