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SST39SF040-45-4C-NHE 参数 Datasheet PDF下载

SST39SF040-45-4C-NHE图片预览
型号: SST39SF040-45-4C-NHE
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位/ 2兆位/ 4兆位( X8 )多用途闪存 [1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash]
分类和应用: 闪存内存集成电路
文件页数/大小: 24 页 / 380 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash  
SST39SF010A / SST39SF020A / SST39SF040  
Data Sheet  
is latched on the rising edge of the sixth WE# pulse. The  
internal Erase operation begins after the sixth WE# pulse.  
The End-of-Erase can be determined using either Data#  
Polling or Toggle Bit methods. See Figure 9 for timing  
waveforms. Any commands written during the Sector-  
Erase operation will be ignored.  
Device Operation  
Commands are used to initiate the memory operation func-  
tions of the device. Commands are written to the device  
using standard microprocessor write sequences. A com-  
mand is written by asserting WE# low while keeping CE#  
low. The address bus is latched on the falling edge of WE#  
or CE#, whichever occurs last. The data bus is latched on  
the rising edge of WE# or CE#, whichever occurs first.  
Chip-Erase Operation  
The SST39SF010A/020A/040 provide Chip-Erase opera-  
tion, which allows the user to erase the entire memory  
array to the “1s” state. This is useful when the entire device  
must be quickly erased.  
Read  
The Read operation of the SST39SF010A/020A/040 is  
controlled by CE# and OE#, both have to be low for the  
system to obtain data from the outputs. CE# is used for  
device selection. When CE# is high, the chip is dese-  
lected and only standby power is consumed. OE# is the  
output control and is used to gate data from the output  
pins. The data bus is in high impedance state when  
either CE# or OE# is high. Refer to the Read cycle timing  
diagram (Figure 4) for further details.  
The Chip-Erase operation is initiated by executing a six-  
byte Software Data Protection command sequence with  
Chip-Erase command (10H) with address 5555H in the last  
byte sequence. The internal Erase operation begins with  
the rising edge of the sixth WE# or CE#, whichever occurs  
first. During the internal Erase operation, the only valid read  
is Toggle Bit or Data# Polling. See Table 4 for the command  
sequence, Figure 10 for timing diagram, and Figure 18 for  
the flowchart. Any commands written during the Chip-  
Erase operation will be ignored.  
Byte-Program Operation  
The SST39SF010A/020A/040 are programmed on a byte-  
by-byte basis. Before programming, the sector where the  
byte exists must be fully erased. The Program operation is  
accomplished in three steps. The first step is the three-byte  
load sequence for Software Data Protection. The second  
step is to load byte address and byte data. During the Byte-  
Program operation, the addresses are latched on the falling  
edge of either CE# or WE#, whichever occurs last. The  
data is latched on the rising edge of either CE# or WE#,  
whichever occurs first. The third step is the internal Pro-  
gram operation which is initiated after the rising edge of the  
fourth WE# or CE#, whichever occurs first. The Program  
operation, once initiated, will be completed, within 20 µs.  
See Figures 5 and 6 for WE# and CE# controlled Program  
operation timing diagrams and Figure 15 for flowcharts.  
During the Program operation, the only valid reads are  
Data# Polling and Toggle Bit. During the internal Program  
operation, the host is free to perform additional tasks. Any  
commands written during the internal Program operation  
will be ignored.  
Write Operation Status Detection  
The SST39SF010A/020A/040 provide two software means  
to detect the completion of a Write (Program or Erase)  
cycle, in order to optimize the system Write cycle time. The  
software detection includes two status bits: Data# Polling  
(DQ7) and Toggle Bit (DQ6). The End-of-Write detection  
mode is enabled after the rising edge of WE# which ini-  
tiates the internal Program or Erase operation.  
The actual completion of the nonvolatile write is asynchro-  
nous with the system; therefore, either a Data# Polling or  
Toggle Bit read may be simultaneous with the completion  
of the Write cycle. If this occurs, the system may possibly  
get an erroneous result, i.e., valid data may appear to con-  
flict with either DQ7 or DQ6. In order to prevent spurious  
rejection, if an erroneous result occurs, the software routine  
should include a loop to read the accessed location an  
additional two (2) times. If both reads are valid, then the  
device has completed the Write cycle, otherwise the rejec-  
tion is valid.  
Sector-Erase Operation  
The Sector-Erase operation allows the system to erase the  
device on a sector-by-sector basis. The sector architecture  
is based on uniform sector size of 4 KByte. The Sector-  
Erase operation is initiated by executing a six-byte com-  
mand load sequence for Software Data Protection with  
Sector-Erase command (30H) and sector address (SA) in  
the last bus cycle. The sector address is latched on the fall-  
ing edge of the sixth WE# pulse, while the command (30H)  
©2003 Silicon Storage Technology, Inc.  
S71147-06-000  
8/04  
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