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SST39SF040-45-4C-NHE 参数 Datasheet PDF下载

SST39SF040-45-4C-NHE图片预览
型号: SST39SF040-45-4C-NHE
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位/ 2兆位/ 4兆位( X8 )多用途闪存 [1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash]
分类和应用: 闪存内存集成电路
文件页数/大小: 24 页 / 380 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash  
SST39SF010A / SST39SF020A / SST39SF040  
Data Sheet  
TABLE 5: DC OPERATING CHARACTERISTICS VDD = 4.5-5.5V1  
Limits  
Symbol Parameter  
Min  
Max  
Units  
Test Conditions  
IDD  
Power Supply Current  
Address input=VILT/VIHT, at f=1/TRC Min  
VDD=VDD Max  
Read2  
25  
35  
3
mA  
mA  
mA  
CE#=VIL, OE#=WE#=VIH, all I/Os open  
CE#=WE#=VIL, OE#=VIH  
Program and Erase  
ISB1  
ISB2  
Standby VDD Current  
(TTL input)  
CE#=VIH, VDD=VDD Max  
Standby VDD Current  
(CMOS input)  
100  
µA  
CE#=VIHC, VDD=VDD Max  
ILI  
Input Leakage Current  
Output Leakage Current  
Input Low Voltage  
1
µA  
µA  
V
VIN=GND to VDD, VDD=VDD Max  
VOUT=GND to VDD, VDD=VDD Max  
VDD=VDD Min  
ILO  
10  
0.8  
VIL  
VIH  
VIHC  
VOL  
VOH  
Input High Voltage  
2.0  
V
VDD=VDD Max  
Input High Voltage (CMOS)  
Output Low Voltage  
Output High Voltage  
VDD-0.3  
V
VDD=VDD Max  
0.4  
V
IOL=2.1 mA, VDD=VDD Min  
2.4  
V
IOH=-400 µA, VDD=VDD Min  
T5.10 1147  
1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C  
(room temperature), and VDD = 5V for SF devices. Not 100% tested.  
2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.  
TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS  
Symbol  
Parameter  
Minimum  
100  
Units  
µs  
1
TPU-READ  
Power-up to Read Operation  
Power-up to Program/Erase Operation  
1
TPU-WRITE  
100  
µs  
T6.1 1147  
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.  
TABLE 7: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)  
Parameter  
Description  
Test Condition  
VI/O = 0V  
Maximum  
1
CI/O  
I/O Pin Capacitance  
Input Capacitance  
12 pF  
6 pF  
1
CIN  
VIN = 0V  
T7.0 1147  
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.  
TABLE 8: RELIABILITY CHARACTERISTICS  
Symbol  
Parameter  
Endurance  
Data Retention  
Latch Up  
Minimum Specification  
Units  
Cycles  
Years  
mA  
Test Method  
1,2  
NEND  
10,000  
100  
JEDEC Standard A117  
JEDEC Standard A103  
JEDEC Standard 78  
1
TDR  
1
ILTH  
100 + IDD  
T8.2 1147  
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.  
2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a  
higher minimum specification.  
©2003 Silicon Storage Technology, Inc.  
S71147-06-000  
8/04  
8