4 Mbit SuperFlash EEPROM
SST28SF040A / SST28VF040A
Data Sheet
TABLE 8: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
Units
ms
1
TPU-READ
Power-up to Read Operation
Power-up to Write Operation
10
10
1
TPU-WRITE
ms
T8.4 310
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
VI/O = 0V
Maximum
1
CI/O
I/O Pin Capacitance
Input Capacitance
12 pF
6 pF
1
CIN
VIN = 0V
T9.0 310
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: RELIABILITY CHARACTERISTICS
Symbol
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
Units
Test Method
1
NEND
10,000
100
Cycles JEDEC Standard A117
1
TDR
Years
mA
JEDEC Standard A103
JEDEC Standard 78
1
ILTH
100 + IDD
T10.7 310
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
S71077-04-000 6/01 310
9
SST [ SILICON STORAGE TECHNOLOGY, INC ]
