4 Mbit SuperFlash EEPROM
SST28SF040A / SST28VF040A
Data Sheet
TABLE 6: DC OPERATING CHARACTERISTICS FOR SST28SF040A
Limits
Symbol Parameter
Min
Max Units Test Conditions
IDD
Power Supply Current
Address input=VIL/VIH, at f=1/TRC Min,
VDD=VDD Max
Read
32
40
3
mA
mA
mA
CE#=OE#=VIL, WE#=VIH, all I/Os open
CE#=WE#=VIL, OE#=VIH, VDD=VDD Max
CE#=VIH, VDD=VDD Max
Program and Erase
ISB1
ISB2
Standby VDD Current
(TTL input)
Standby VDD Current
(CMOS input)
20
µA
CE#=VDD-0.3V, VDD=VDD Max
ILI
Input Leakage Current
Output Leakage Current
Input Low Voltage
1
µA
µA
V
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
ILO
VIL
VIH
VOL
VOH
VH
IH
10
0.8
Input High Voltage
2.0
V
VDD=VDD Max
Output Low Voltage
Output High Voltage
Supervoltage for A9
Supervoltage Current for A9
0.4
V
IOL=2.1 mA, VDD=VDD Min
IOH=-400 µA, VDD=VDD Min
CE#=OE#=VIL, WE#=VIH
CE#=OE#=VIL, WE#=VIH, A9=VH Max
2.4
V
11.6
12.4
200
V
µA
T6.4 310
TABLE 7: DC OPERATING CHARACTERISTICS FOR SST28VF040A
Limits
Symbol Parameter
Min
Max Units Test Conditions
Address input=VIL/VIH, at f=1/TRC Min,
DD=VDD Max
IDD
Power Supply Current
V
Read
10
25
20
mA
mA
µA
CE#=OE#=VIL, WE#=VIH, all I/Os open
CE#=WE#=VIL, OE#=VIH, VDD=VDD Max
CE#=OE#=WE#=VDD-0.3V, VDD=VDD Max
Program and Erase
ISB2
Standby VDD Current
(CMOS input)
ILI
Input Leakage Current
Output Leakage Current
Input Low Voltage
1
µA
µA
V
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
ILO
VIL
VIH
VOL
VOH
VH
IH
10
0.8
Input High Voltage
2.0
V
VDD=VDD Max
Output Low Voltage
Output High Voltage
Supervoltage for A9
Supervoltage Current for A9
0.4
V
IOL=100 µA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
CE#=OE#=VIL, WE#=VIH
CE#=OE#=VIL, WE#=VIH, A9=VH Max
2.4
V
11.6
12.4
200
V
µA
T7.4 310
©2001 Silicon Storage Technology, Inc.
S71077-04-000 6/01 310
8
SST [ SILICON STORAGE TECHNOLOGY, INC ]
