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SST28SF040A-120-4C-PH 参数 Datasheet PDF下载

SST28SF040A-120-4C-PH图片预览
型号: SST28SF040A-120-4C-PH
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8 )超快闪EEPROM [4 Mbit (512K x8) SuperFlash EEPROM]
分类和应用: 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 24 页 / 321 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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4 Mbit SuperFlash EEPROM  
SST28SF040A / SST28VF040A  
Data Sheet  
command can be reissued as many times as necessary to  
complete the Chip-Erase operation. The SST28SF/  
VF040A cannot be over-erased. (See Figure 8)  
Command Definitions  
Table 4 contains a command list and a brief summary of  
the commands. The following is a detailed description of  
the operations initiated by each command.  
Byte-Program Operation  
The Byte-Program operation is initiated by writing the setup  
command (10H). Once the program setup is performed,  
programming is executed by the next WE# pulse. See Fig-  
ures 5 and 6 for timing waveforms. The address bus is  
latched on the falling edge of WE# or CE#, whichever  
occurs last. The data bus is latched on the rising edge of  
WE# or CE#, whichever occurs first, and begins the Pro-  
gram operation. The Program operation is terminated auto-  
matically by an internal timer. See Figure 16 for the  
programming flowchart.  
Sector-Erase Operation  
The Sector-Erase operation erases all bytes within a sector  
and is initiated by a setup command and an execute com-  
mand. A sector contains 256 Bytes. This sector erasability  
enhances the flexibility and usefulness of the SST28SF/  
VF040A, since most applications only need to change a  
small number of bytes or sectors, not the entire chip.  
The setup command is performed by writing 20H to the  
device. The execute command is performed by writing D0H  
to the device. The Erase operation begins with the rising  
edge of the WE# or CE#, whichever occurs first and termi-  
nates automatically by using an internal timer. The End-of-  
Erase can be determined using either Data# Polling, Tog-  
gle Bit, or Successive Reads detection methods. See Fig-  
ure 9 for timing waveforms.  
The two-step sequence of a setup command followed by  
an execute command ensures that only the addressed  
byte is programmed and other bytes are not inadvertently  
programmed.  
The Byte-Program Flowchart Description  
The two-step sequence of a setup command followed by  
an execute command ensures that only memory contents  
within the addressed sector are erased and other sectors  
are not inadvertently erased.  
Programming data into the SST28SF/VF040A is accom-  
plished by following the Byte-Program flowchart shown in  
Figure 16. The Byte-Program command sets up the byte  
for programming. The address bus is latched on the falling  
edge of WE# or CE#, whichever occurs last. The data bus  
is latched on the rising edge of WE# or CE#, whichever  
occurs first and begins the Program operation. The end of  
program can be detected using either the Data# Polling,  
Toggle bit, or Successive reads.  
Sector-Erase Flowchart Description  
Fast and reliable erasing of the memory contents within a  
sector is accomplished by following the Sector-Erase flow-  
chart as shown in Figure 18. The entire procedure consists  
of the execution of two commands. The Sector-Erase oper-  
ation will terminate after a maximum of 4 ms. A Reset com-  
mand can be executed to terminate the Sector-Erase  
operation; however, if the Erase operation is terminated  
prior to the 4 ms time-out, the sector may not be fully  
erased. A Sector-Erase command can be reissued as  
many times as necessary to complete the Erase operation.  
The SST28SF/VF040A cannot be over-erased.  
Reset Operation  
The Reset command is provided as a means to safely  
abort the Erase or Program command sequences. Follow-  
ing either setup commands (Erase or Program) with a write  
of FFH will safely abort the operation. Memory contents will  
not be altered. After the Reset command, the device  
returns to the Read mode. The Reset command does not  
enable Software Data Protection. See Figure 7 for timing  
waveforms.  
Chip-Erase Operation  
The Chip-Erase operation is initiated by a setup command  
(30H) and an execute command (30H). The Chip-Erase  
operation allows the entire array of the SST28SF/VF040A  
to be erased in one operation, as opposed to 2048 Sector-  
Erase operations. Using the Chip-Erase operation will mini-  
mize the time to rewrite the entire memory array. The Chip-  
Erase operation will terminate after a maximum of 20 ms. A  
Reset command can be executed to terminate the Erase  
operation; however, if the Chip-Erase operation is termi-  
nated prior to the 20 ms time-out, the chip may not be com-  
pletely erased. If an erase error occurs a Chip-Erase  
Read  
The Read operation is initiated by setting CE#, and OE# to  
logic low and setting WE# to logic high (See Table 3). See  
Figure 4 for Read cycle timing waveform. The Read opera-  
tion from the host retrieves data from the array. The device  
remains enabled for Read until another operation mode is  
accessed. During initial power-up, the device is in the Read  
mode and is Software Data protected. The device must be  
unprotected to execute a Write command.  
©2001 Silicon Storage Technology, Inc.  
S71077-04-000 6/01 310  
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