64 Mbit SPI Serial Dual I/O Flash
SST25VF064C
Data Sheet
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-2.0V to VDD+2.0V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
Operating Range
Range
AC Conditions of Test
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . CL = 30 pF
See Figure 28
Ambient Temp
VDD
Commercial
Industrial
0°C to +70°C
-40°C to +85°C
2.7-3.6V
2.7-3.6V
TABLE 10: DC Operating Characteristics (VDD = 2.7-3.6V)
Limits
Symbol Parameter
Min
Max Units Test Conditions
IDDR
Read Current
12
25
25
mA
mA
mA
CE# = 0.1 VDD/0.9 VDD@33 MHz, SO = open
CE# = 0.1 VDD/0.9 VDD@80 MHz, SO = open
CE# = 0.1 VDD/0.9 VDD@75/50 MHz
IDDR2
IDDR3
High-Speed Read Current
Fast-Read Dual-Output/Dual I/O
Current
IDDW
ISB1
ILI
Program and Erase Current
Standby Current
25
20
1
mA
µA
µA
µA
V
CE# = VDD
CE# = VDD, VIN = VDD or VSS
VIN = GND to VDD, VDD = VDD Max
VOUT = GND to VDD, VDD = VDD Max
VDD = VDD Min
Input Leakage Current
Output Leakage Current
Input Low Voltage
ILO
1
VIL
0.8
VIH
VOL
VOH
Input High Voltage
0.7 VDD
VDD-0.2
V
VDD = VDD Max
Output Low Voltage
Output High Voltage
0.2
V
IOL = 100 µA, VDD = VDD Min
IOH = -100 µA, VDD = VDD Min
V
T10.0 1392
TABLE 11: Capacitance (TA = 25°C, f = 1 Mhz, other pins open)
Parameter
Description
Test Condition
VOUT = 0V
Maximum
1
COUT
Output Pin Capacitance
Input Capacitance
12 pF
6 pF
1
CIN
VIN = 0V
T11.0 1392
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2010 Silicon Storage Technology, Inc.
S71392-04-000
04/10
23
SST [ SILICON STORAGE TECHNOLOGY, INC ]
