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SST25VF040B-50-4C-SAE 参数 Datasheet PDF下载

SST25VF040B-50-4C-SAE图片预览
型号: SST25VF040B-50-4C-SAE
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位的SPI串行闪存 [4 Mbit SPI Serial Flash]
分类和应用: 闪存
文件页数/大小: 33 页 / 551 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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4 Mbit SPI Serial Flash  
SST25VF040B  
Data Sheet  
Write-Status-Register (WRSR)  
The Write-Status-Register instruction writes new values to  
the BP3, BP2, BP1, BP0, and BPL bits of the status regis-  
ter. CE# must be driven low before the command  
sequence of the WRSR instruction is entered and driven  
high before the WRSR instruction is executed. See Figure  
19 for EWSR or WREN and WRSR instruction sequences.  
BPL bit is disabled and the BPL, BP0, and BP1 and BP2  
bits in the status register can all be changed. As long as  
BPL bit is set to 0 or WP# pin is driven high (VIH) prior to the  
low-to-high transition of the CE# pin at the end of the  
WRSR instruction, the bits in the status register can all be  
altered by the WRSR instruction. In this case, a single  
WRSR instruction can set the BPL bit to “1” to lock down  
the status register as well as altering the BP0, BP1, and  
BP2 bits at the same time. See Table 2 for a summary  
description of WP# and BPL functions.  
Executing the Write-Status-Register instruction will be  
ignored when WP# is low and BPL bit is set to “1”. When  
the WP# is low, the BPL bit can only be set from “0” to “1” to  
lock-down the status register, but cannot be reset from “1”  
to “0”. When WP# is high, the lock-down function of the  
CE#  
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15  
MODE 3  
MODE 0  
MODE 3  
MODE 0  
SCK  
STATUS  
REGISTER IN  
50 or 06  
01  
7 6 5 4 3 2 1 0  
MSB  
SI  
MSB  
MSB  
HIGH IMPEDANCE  
SO  
1295 EWSR.0  
FIGURE 19: Enable-Write-Status-Register (EWSR) or  
Write-Enable (WREN) and Write-Status-Register (WRSR) Sequence  
©2009 Silicon Storage Technology, Inc.  
S71295-05-000  
10/09  
19  
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