4 Mbit SPI Serial Flash
SST25VF040B
Data Sheet
TABLE 9: DC Operating Characteristics (25VF040B-80-xx-xxxE)
Limits
Symbol Parameter
Min
Max Units Test Conditions
IDDR
IDDR3
IDDW
ISB
Read Current
12
20
30
20
1
mA
mA
mA
µA
µA
µA
V
CE#=0.1 VDD/0.9 VDD@33 MHz, SO=open
Read Current
CE#=0.1 VDD/0.9 VDD@80 MHz, SO=open
CE#=VDD
Program and Erase Current
Standby Current
CE#=VDD, VIN=VDD or VSS
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
ILI
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Output High Voltage
ILO
1
VIL
0.8
VIH
0.7 VDD
VDD-0.2
V
VDD=VDD Max
VOL
VOL2
VOH
0.2
0.4
V
IOL=100 µA, VDD=VDD Min
IOL=1.6 mA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
V
V
T9.0 1295
TABLE 10: Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
1
TPU-READ
VDD Min to Read Operation
VDD Min to Write Operation
10
10
µs
µs
1
TPU-WRITE
T10.0 1295
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: Capacitance (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
VOUT = 0V
Maximum
1
COUT
Output Pin Capacitance
Input Capacitance
12 pF
6 pF
1
CIN
VIN = 0V
T11.0 1295
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 12: Reliability Characteristics
Symbol
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
Units
Test Method
1
NEND
10,000
100
Cycles JEDEC Standard A117
1
TDR
Years
mA
JEDEC Standard A103
JEDEC Standard 78
1
ILTH
100 + IDD
T12.0 1295
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2009 Silicon Storage Technology, Inc.
S71295-05-000
10/09
23
SST [ SILICON STORAGE TECHNOLOGY, INC ]
