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SST25VF040B-50-4C-SAE 参数 Datasheet PDF下载

SST25VF040B-50-4C-SAE图片预览
型号: SST25VF040B-50-4C-SAE
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位的SPI串行闪存 [4 Mbit SPI Serial Flash]
分类和应用: 闪存
文件页数/大小: 33 页 / 551 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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4 Mbit SPI Serial Flash  
SST25VF040B  
Data Sheet  
CE#  
SCK  
MODE 3  
MODE 0  
0
1 2 3 4 5 6 7  
06  
SI  
MSB  
HIGH IMPEDANCE  
SO  
1295 WREN.0  
FIGURE 17: Write Enable (WREN) Sequence  
Write-Disable (WRDI)  
terminate any programming operation in progress. Any pro-  
gram operation in progress may continue up to TBP after  
executing the WRDI instruction. CE# must be driven high  
before the WRDI instruction is executed.  
The Write-Disable (WRDI) instruction resets the Write-  
Enable-Latch bit and AAI bit to 0 disabling any new Write  
operations from occurring. The WRDI instruction will not  
CE#  
MODE 3  
0
1
2
3
4 5 6 7  
MODE 0  
SCK  
04  
SI  
MSB  
HIGH IMPEDANCE  
SO  
1295 WRDI.0  
FIGURE 18: Write Disable (WRDI) Sequence  
Enable-Write-Status-Register (EWSR)  
The Enable-Write-Status-Register (EWSR) instruction  
arms the Write-Status-Register (WRSR) instruction and  
opens the status register for alteration. The Write-Status-  
Register instruction must be executed immediately after the  
execution of the Enable-Write-Status-Register instruction.  
This two-step instruction sequence of the EWSR instruc-  
tion followed by the WRSR instruction works like SDP (soft-  
ware data protection) command structure which prevents  
any accidental alteration of the status register values. CE#  
must be driven low before the EWSR instruction is entered  
and must be driven high before the EWSR instruction is  
executed.  
©2009 Silicon Storage Technology, Inc.  
S71295-05-000  
10/09  
18  
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