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S29GL128P90FFIR10 参数 Datasheet PDF下载

S29GL128P90FFIR10图片预览
型号: S29GL128P90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存存储
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( P r e l i m i n a r y )  
14. Revision History  
Section  
Description  
Revision A0 (October 29, 2004)  
Initial Release.  
Revision A1 (October 20, 2005)  
Global  
Revised all sections of document.  
Revision A2 (October 19, 2006)  
Revised all sections of document. Reformatted document to new template. Changed speed options  
for S29GL01GP.  
Global  
Revision A3 (November 21, 2006)  
AC Characteristics  
Erase and Program Operations table: Changed tBUSY to a maximum specification.  
Revision A4 (December 18, 2006)  
Changed tACC, tCE specifications on 128 Mb, 256 Mb, and 512 Mb devices. Added 90 and 100 ns  
speed options.  
Global  
Write Buffer Programming, Sector  
Erase  
Write Buffer Programming Operation, Sector Erase Operation figures: Deleted “Wait 4 ms” box from  
flowcharts.  
Password Protection Method  
Read-only Operations table  
Lock Register Program Algorithm figure: Deleted “Wait 4 ms” box from flowchart.  
Modified tRC, tACC, tCE, tOE specifications.  
Program and Erase Operations tables  
Changed tDS specification, deleted write cycle time note.  
TSOP Pin and BGA Capacitance table Changed all specifications in table.  
Revision A5 (May 18, 2007)  
Changed data sheet status to Preliminary.  
Global  
Deleted references to requirement for external WP# pullup.  
Performance Characteristics  
Hardware Reset  
Max. Read Access Times table: Added note.  
Deleted note from section.  
AC Characteristics  
Reset Timings figure: Deleted note.  
S29GL-P Sector Protection Command Definitions tables: Changed “Global Non-Volatile Freeze” to  
“Global Volatile Freeze”.  
Command Definitions tables  
DC Characteristics  
CMOS Compatible table: Changed ICC1 maximum current for 5 MHz and MHz test conditions.  
Page Read Timings figure  
Revision A6 (October 23, 2007)  
Performance Characteristics  
Ordering Information  
64-Ball Fortified BGA  
56-Pin TSOP  
Corrected address range for top waveform.  
Changed speed options for S29GL512P  
Corrected samples OPN valid combinations; changed speed options for S29GL512P  
Clarified ball “D1” connection  
Clarified pin “30” connection  
Autoselect  
Added recommendation statement  
Accelerated Program  
Persistent Protection Bits  
Added recommendation statement  
Removed “Erase” from title and flow chart  
Sections “Factory Locked Secured Silicon Sector” & “Customer Lockable Secured Silicon Sector”:  
clarified shipping options  
Secured Silicon Sector  
Power-up Sequence Timing  
Changed tRH from “Max” to “Min” value  
Advance Information on S29GL-R  
65 nm MirrorBit Hardware Reset  
(RESET#) and Power-up Sequence  
Added section  
Global  
Fixed cross-references that were not live hyperlinks.  
Revision A7 (November 8, 2007)  
Advance Information on S29GL-R 65  
nm MirrorBit Hardware Reset (RESET#) Changed timing specs and waveforms  
and Power-up Sequence  
76  
S29GL-P MirrorBit® Flash Family  
S29GL-P_00_A7 November 8, 2007  
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