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S29GL128P90FFIR10 参数 Datasheet PDF下载

S29GL128P90FFIR10图片预览
型号: S29GL128P90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存存储
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( P r e l i m i n a r y )  
13. Advance Information on S29GL-R 65 nm MirrorBit Hardware  
Reset (RESET#) and Power-up Sequence  
Table 13.1 Hardware Reset (RESET#)  
Parameter  
Description  
Limit  
Min  
Time  
35  
Unit  
µs  
t
RESET# Low to CE# Low  
RESET# Pulse Width  
RPH  
t
Min  
200  
200  
ns  
RP  
t
Time between RESET# (high) and CE# (low)  
Min  
ns  
RH  
Note  
CE#, OE# and WE# must be at logic high during Reset Time.  
Figure 13.1 Reset Timings  
tRP  
RESET#  
CE#  
tRH  
tRPH  
Note  
The sum of t and t must be equal to or greater than t .  
RPH  
RP  
RH  
Table 13.2 Power-Up Sequence Timings  
Parameter  
Description  
Limit  
Min  
Min  
Min  
Min  
Min  
Time  
300  
300  
35  
Unit  
µs  
t
V
V
Setup Time to first access  
Setup Time to first access  
VCS  
CC  
t
µs  
VIOS  
IO  
t
RESET# Low to CE# Low  
µs  
RPH  
t
RESET# Pulse Width  
200  
200  
ns  
RP  
t
Time between RESET# (high) and CE# (low)  
ns  
RH  
Notes  
1.  
V
< V + 200 mV.  
CC  
IO  
2.  
V
and V ramp must be in sync during power-up. If RESET# is not stable for 500 µs, the following conditions may occur: the device  
IO  
CC  
does not permit any read and write operations, valid read operations return FFh, and a hardware reset is required.  
3. Maximum V power up current is 20 mA (RESET# =V ).  
CC  
IL  
Figure 13.2 Power-On Reset Timings  
VCC  
VIO  
tVIOS  
t VCS  
tRP  
RESET#  
CE#  
tRH  
tRPH  
Note  
The sum of t and t must be equal to or greater than t .  
RP  
RH  
RPH  
November 8, 2007 S29GL-P_00_A7  
S29GL-P MirrorBit® Flash Family  
75