欢迎访问ic37.com |
会员登录 免费注册
发布采购

S29GL128P90FFIR10 参数 Datasheet PDF下载

S29GL128P90FFIR10图片预览
型号: S29GL128P90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存存储
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
 浏览型号S29GL128P90FFIR10的Datasheet PDF文件第69页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第70页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第71页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第72页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第74页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第75页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第76页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第77页  
D a t a S h e e t ( P r e l i m i n a r y )  
Table 12.6 System Interface String  
Addresses (x16)  
Addresses (x8)  
Data  
Description  
1Bh  
1Ch  
1Dh  
1Eh  
1Fh  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
36h  
38h  
3Ah  
3Ch  
3Eh  
40h  
42h  
44h  
46h  
48h  
4Ah  
4Ch  
0027h  
0036h  
0000h  
0000h  
0006h  
0006h  
0009h  
0013h  
0003h  
0005h  
0003h  
0002h  
VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 mV  
VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 mV  
VPP Min. voltage (00h = no VPP pin present)  
VPP Max. voltage (00h = no VPP pin present)  
Typical timeout per single byte/word write 2N µs  
Typical timeout for Min. size buffer write 2N µs (00h = not supported)  
Typical timeout per individual block erase 2N ms  
Typical timeout for full chip erase 2N ms (00h = not supported)  
Max. timeout for byte/word write 2N times typical  
Max. timeout for buffer write 2N times typical  
Max. timeout per individual block erase 2N times typical  
Max. timeout for full chip erase 2N times typical (00h = not supported)  
Table 12.7 Device Geometry Definition  
Addresses (x16)  
Addresses (x8)  
Data  
Description  
001Bh  
001Ah  
Device Size = 2N byte  
27h  
4Eh  
0019h  
0018h  
1B = 1 Gb, 1A= 512 Mb, 19 = 256 Mb, 18 = 128 Mb  
28h  
29h  
50h  
52h  
0002h  
0000h  
Flash Device Interface description (refer to CFI publication 100)  
2Ah  
2Bh  
54h  
56h  
0006h  
0000h  
Max. number of byte in multi-byte write = 2N  
(00h = not supported)  
Number of Erase Block Regions within device (01h = uniform device, 02h = boot  
device)  
2Ch  
58h  
0001h  
Erase Block Region 1 Information  
2Dh  
2Eh  
2Fh  
30h  
5Ah  
5Ch  
5Eh  
60h  
00xxh  
000xh  
0000h  
000xh  
(refer to the CFI specification or CFI publication 100)  
00FFh, 0003h, 0000h, 0002h =1 Gb  
00FFh, 0001h, 0000h, 0002h = 512 Mb  
00FFh, 0000h, 0000h, 0002h = 256 Mb  
007Fh, 0000h, 0000h, 0002h = 128 Mb  
31h  
32h  
33h  
34h  
60h  
64h  
66h  
68h  
0000h  
0000h  
0000h  
0000h  
Erase Block Region 2 Information (refer to CFI publication 100)  
Erase Block Region 3 Information (refer to CFI publication 100)  
Erase Block Region 4 Information (refer to CFI publication 100)  
35h  
36h  
37h  
38h  
6Ah  
6Ch  
6Eh  
70h  
0000h  
0000h  
0000h  
0000h  
39h  
3Ah  
3Bh  
3Ch  
72h  
74h  
76h  
78h  
0000h  
0000h  
0000h  
0000h  
November 8, 2007 S29GL-P_00_A7  
S29GL-P MirrorBit® Flash Family  
73