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S29GL256N10FFI010 参数 Datasheet PDF下载

S29GL256N10FFI010图片预览
型号: S29GL256N10FFI010
PDF下载: 下载PDF文件 查看货源
内容描述: 的MirrorBit闪存系列 [MirrorBit Flash Family]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 110 页 / 1430 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
Note that if a Write Buffer address location is loaded multiple times, the address/  
data pair counter will be decremented for every data load operation. The host  
system must therefore account for loading a write-buffer location more than  
once. The counter decrements for each data load operation, not for each unique  
write-buffer-address location. Note also that if an address location is loaded more  
than once into the buffer, the final data loaded for that address will be  
programmed.  
Once the specified number of write buffer locations have been loaded, the system  
must then write the Program Buffer to Flash command at the sector address. Any  
other address and data combination aborts the Write Buffer Programming oper-  
ation. The device then begins programming. Data polling should be used while  
monitoring the last address location loaded into the write buffer. DQ7, DQ6, DQ5,  
and DQ1 should be monitored to determine the device status during Write Buffer  
Programming.  
The write-buffer programming operation can be suspended using the standard  
program suspend/resume commands. Upon successful completion of the Write  
Buffer Programming operation, the device is ready to execute the next command.  
The Write Buffer Programming Sequence can be aborted in the following ways:  
„ Load a value that is greater than the page buffer size during the Number of  
Locations to Program step.  
„ Write to an address in a sector different than the one specified during the  
Write-Buffer-Load command.  
„ Write an Address/Data pair to a different write-buffer-page than the one se-  
lected by the Starting Address during the write buffer data loading stage of  
the operation.  
„ Write data other than the Confirm Command after the specified number of  
data load cycles.  
The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address  
location loaded), DQ6 = toggle, and DQ5=0. A Write-to-Buffer-Abort Reset com-  
mand sequence must be written to reset the device for the next operation. Note  
that the full 3-cycle Write-to-Buffer-Abort Reset command sequence is required  
when using Write-Buffer-Programming features in Unlock Bypass mode.  
Write buffer programming is allowed in any sequence. Note that the SecSi sector,  
autoselect, and CFI functions are unavailable when a program operation is in  
progress. This flash device is capable of handling multiple write buffer program-  
ming operations on the same write buffer address range without intervening  
erases. For applications requiring incremental bit programming, a modified pro-  
gramming method is required, please contact your local Spansion representative.  
Any bit in a write buffer address range cannot be programmed from “0”  
back to a “1.” Attempting to do so may cause the device to set DQ5 = 1, or  
cause the DQ7 and DQ6 status bits to indicate the operation was successful. How-  
ever, a succeeding read will show that the data is still “0.Only erase operations  
can convert a “0” to a “1.”  
Accelerated Program  
The device offers accelerated program operations through the WP#/ACC pin.  
When the system asserts VHH on the WP#/ACC pin, the device automatically en-  
ters the Unlock Bypass mode. The system may then write the two-cycle Unlock  
Bypass program command sequence. The device uses the higher voltage on the  
WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not  
May 13, 2004 27631A4  
S29GLxxxN MirrorBitTM Flash Family  
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