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S29GL128N90TFI010 参数 Datasheet PDF下载

S29GL128N90TFI010图片预览
型号: S29GL128N90TFI010
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Advance Information on S9GL-P AC Characteristics  
Changed speed specifications and units of measure for tREADY, tRP, tRH, and tRPD. Changed  
specifications on tREADY from maximum to minimum.  
Revision A9 (June 15, 2005)  
Ordering Information table  
Added note to temperature range.  
Valid Combinations table  
Replaced table.  
DC Characteristics table  
Replaced VIL lines for ICC4, ICC5, ICC6  
.
Connection Diagrams  
Modified 56-Pin Standard TSOP (pg 8). Modified 64-ball Fortified BGA.  
Advance Information on S9GL-P AC Characteristics  
Added second table.  
Revision B0 (April 22, 2006)  
Global  
Changed document status to Full Production.  
Ordering Information  
Changed description of “A” for Package Materials Set. Modified S29GL128N Valid Combina-  
tions table.  
S29GL128N Sector Address Table  
Corrected bit range values for A22–A16.  
Persistent Protection Bit (PPB)  
Corrected typo in second sentence, second paragraph.  
Secured Silicon Sector Flash Memory Region  
Deleted note at end of second paragraph.  
Customer Lockable: Secured Silicon Sector NOT Programmed or Protected At the  
Factory  
Modified 1st bullet text.  
Write Protect (WP#)  
Modified third paragraph.  
Device Geometry Definition table  
Changed 1st x8 address for Erase Block Region 2.  
Word Program Command Sequence  
Modified fourth paragraph.  
Write Buffer Programming  
Deleted note from eighth paragraph.  
Program Suspend/Program Resume Command Sequence  
Corrected typos in first paragraph.  
Lock Register Command Set Definitions  
Modified fifth paragraph.  
S29GL-N_00_B3 October 13, 2006  
S29GL-N MirrorBit™ Flash Family  
97  
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