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S29GL128N90TFI010 参数 Datasheet PDF下载

S29GL128N90TFI010图片预览
型号: S29GL128N90TFI010
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Revision A4 (May 13, 2004)  
Global  
Removed references to RTSOP.  
Distinctive Characteristics  
Removed 16-word/32-byte page read buffer from Performance Characteristics.  
Changed Low power consumption to 25 mA typical active read current and removed 10 mA  
typical intrapage active read current.  
Ordering Information  
Changed formatting of pages.  
Changed model numbers from 00,01,02,03 to 01, 02, V1, V2.  
Table 1, “Device Bus Operations”  
Combined WP# and ACC columns.  
Table 8, “CFI Query Identification String”, Table 9, “System Interface String”,  
Table 10, “Device Geometry Definition”, and Table 11, “Primary Vendor-Specific  
Extended Query  
Added Address (x8) column.  
Word Program Command Sequence  
Added text to fourth paragraph.  
Figure 1, “Write Buffer Programming Operation,”  
Added note references and removed DQ15 and DQ13.  
Figure 3, “Program Suspend/Program Resume,”  
Changed field to read XXXh/B0h and XXXh/30h.  
Password Protection Command Set Definitions  
Replaced all text.  
Command Definitions  
Changed the first cycle address of CFI Query to 55.  
Table 14, “ Memory Array Commands (x8)”  
Changed the third cycle data Device ID to 90.  
Removed Unlock Bypass Reset.  
Removed Note 12 and 13.  
Figure 5, “Data# Polling Algorithm,”  
Removed DQ15 and DQ13.  
Absolute Maximum Ratings  
Removed VCC from All other pins with respect to Ground.  
CMOS Compatible  
Changed the Max of ICC4 to 70 mA.  
Added VIL to the Test conditions of ICC5, ICC6, and ICC7  
Change the Min of VIL to - 0.1 V.  
Updated note 5.  
Read-Only Operations–S29GL128N Only  
Added tCEH parameter to table.  
94  
S29GL-N MirrorBit™ Flash Family  
S29GL-N_00_B3 October 13, 2006  
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