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S29GL128N90TFI010 参数 Datasheet PDF下载

S29GL128N90TFI010图片预览
型号: S29GL128N90TFI010
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Advance Information on S29GL-P Hardware Reset (RESET#)  
and Power-up Sequence  
Table 18. Hardware Reset (RESET#)  
Parameter  
JEDEC  
Std.  
Description  
Speed  
Unit  
RESET# Pin Low (During Embedded Algorithms)  
to Read Mode or Write mode  
tReady  
Min  
Min  
35  
µs  
RESET# Pin Low (NOT During Embedded  
Algorithms) to Read Mode or Write mode  
tReady  
35  
µs  
tRP  
tRH  
tRPD  
tRB  
RESET# Pulse Width  
Min  
Min  
Min  
Min  
35  
200  
10  
0
µs  
ns  
µs  
ns  
Reset High Time Before Read  
RESET# Low to Standby Mode  
RY/BY# Recovery Time  
Note: CE#, OE# and WE# must be at logic high during Reset Time.  
RY/BY#  
CE#, OE#  
tRH  
RESET#  
tRP  
tReady  
Reset Timings NOT during Embedded Algorithms  
Reset Timings during Embedded Algorithms  
tReady  
RY/BY#  
tRB  
CE#, OE#  
RESET#  
tRP  
tRH  
Figure 21. Reset Timings  
90  
S29GL-N MirrorBit™ Flash Family  
S29GL-N_00_B3 October 13, 2006  
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