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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Alternate CE# Controlled Erase and Program Operations  
Created a family table.  
Erase and Programming Performance  
Created a family table.  
Revision A6 (January 24, 2005)  
Global  
Updated access times for S29GL512N.  
Product Selector Guides  
All tables updated.  
Valid Combinations Tables  
All tables updated.  
AC Characteristics Read-Only Options Table  
Added note for 90 ns speed options.  
AC Characteristics Erase and Programming Performance Table  
Added note for 90 ns speed options.  
Figure 17 on page 83  
Updated timing diagram.  
AC Characteristics Alternate CE# Controlled Erase and Program  
Operations Table  
Added note for 90 ns speed options.  
Revision A7 (February 14, 2005)  
Distinctive Characteristics  
Added Product Availability Table  
Ordering Information  
Under Model Numbers, changed VIO voltage values for models V1 and V2.  
Physical Dimensions  
Updated Package Table  
Revision A8 (May 9, 2005)  
Product Availability Table  
Updated data in VCC and availability columns.  
Product Selector Guide  
Combined GL128N and GL256N tables. Changed upper limit of VIO voltage range to 3.6 V.  
Ordering Information  
Added wireless temperature range. Combined valid combinations table and updated for wire-  
less temperature range part numbers.  
DC Characteristics table  
Added VIO = VCC test condition to ICC4, ICC5, ICC6 specifications. Corrected unit of measure  
on ICC4 to µA. Changed maximum specifications for IACC (on ACC pin) and ICC3 to 90 mA.  
Tables 12–15, Memory Array and Sector Protection (x8 & x16)  
Re-formatted command definition tables for easier reference.  
96  
S29GL-N MirrorBit™ Flash Family  
S29GL-N_00_B3 October 13, 2006  
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