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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Volatile Sector Protection Command Set  
Modified fourth paragraph.  
Sector Protection Commands (x16) table  
Changed read command address for Lock Register Bits  
Memory Array Commands (x8)  
Added Program and Unlock Bypass Mode commands to table.  
Write Operation Status  
Deleted note (second paragraph).  
DC Characteristics table  
Modified test conditions for ICC4  
.
Revision B1 (May 5, 2006)  
Ordering Information  
Modified speed option, package material set, temperature range descriptions in breakout di-  
agram. Modified Note 1.  
Advance Information on S29GL-P AC Characteristics Hardware Reset (RESET#)  
Replaced contents in section.  
Revision B2 (October 3, 2006)  
Connection Diagrams  
Corrected 56-pin TSOP package drawing.  
Revision B3 (October 13, 2006)  
Write Buffer Programming  
Deleted reference to incremental bit programming in last paragraph of section.  
Colophon  
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary  
industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that  
includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal  
injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control,  
medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and  
artificial satellite). Please note that Spansion will not be liable to you and/or any third party for any claims or damages arising in connection with above-men-  
tioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures  
by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other  
abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under  
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-  
thorization by the respective government entity will be required for export of those products.  
Trademarks and Notice  
The contents of this document are subject to change without notice. This document may contain information on a SpansionTM product under development  
by Spansion Inc. Spansion Inc. reserves the right to change or discontinue work on any product without notice. The information in this document is provided  
as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement  
of third-party rights, or any other warranty, express, implied, or statutory. Spansion Inc. assumes no liability for any damages of any kind arising out of the  
use of the information in this document.  
Copyright © 2003–2006 Spansion Inc. All rights reserved. SpansionTM, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof, are trade-  
marks of Spansion Inc. Other company and product names used in this publication are for identification purposes only and may be trademarks of their re-  
spective companies.  
98  
S29GL-N MirrorBit™ Flash Family  
S29GL-N_00_B3 October 13, 2006  
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