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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
 浏览型号S29GL128N11TAIV10的Datasheet PDF文件第92页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第93页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第94页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第95页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第96页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第98页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第99页浏览型号S29GL128N11TAIV10的Datasheet PDF文件第100页  
D a t a S h e e t  
Figure 11, “Read Operation Timings,”  
Added tCEH to figure.  
Figure 12, “Page Read Timings,”  
Change A1-A0 to A2-A0.  
Erase and Program Operations  
Updated tWHWH1 and tWHWH2 with values.  
Figure 16, “Chip/Sector Erase Operation Timings,”  
Changed 5555h to 55h and 3030h to 30h.  
Figure 17, “Data# Polling Timings (During Embedded Algorithms),”  
Removed DQ15 and DQ14-DQ8  
Added Note 2  
Figure 18, “Toggle Bit Timings (During Embedded Algorithms),”  
Changed DQ6 & DQ14/DQ2 & DQ10 to DQ2 and DQ6.  
Alternate CE# Controlled Erase and Program Operations  
Updated tWHWH1 and tWHWH2 with values.  
Latchup Characteristics  
Removed Table.  
Erase and Programming Performance  
Updated TBD with values.  
Updated Note 1 and 2.  
Physical Dimensions  
Removed the reverse pinout information and note 3.  
Revision A5 (September 29, 2004)  
Performance Characteristics  
Removed 80 ns.  
Product Selector Guide  
Updated values in tables.  
Ordering Information  
Created a family table.  
Operating Ranges  
Updated VIO.  
CMOS Characteristics  
Created a family table.  
Read-Only Operations  
Created a family table.  
Hardware Reset (RESET#)  
Created a family table.  
Figure 13, “Reset Timings,”  
Added tRH to waveform.  
Erase and Program Operations  
Created a family table.  
S29GL-N_00_B3 October 13, 2006  
S29GL-N MirrorBit™ Flash Family  
95  
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