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S29GL064N90TFI070 参数 Datasheet PDF下载

S29GL064N90TFI070图片预览
型号: S29GL064N90TFI070
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆, 32兆3.0伏只页面模式闪存设有110纳米的MirrorBit工艺技术 [64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 79 页 / 3123 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Figure 10.5 Data# Polling Algorithm  
START  
Read DQ15–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
No  
DQ5 = 1?  
Yes  
Read DQ15–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
PASS  
FAIL  
Notes  
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being  
erased. During chip erase, a valid address is any non-protected sector address.  
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.  
10.12 RY/BY#: Ready/Busy#  
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in  
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command  
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a  
pull-up resistor to VCC  
.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the  
Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or in  
the erase-suspend-read mode. Table 10.5 on page 60 shows the outputs for RY/BY#.  
56  
S29GL-N MirrorBit® Flash Family  
S29GL-N_01_09 November 16, 2007  
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