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S29GL064M90FFIR10 参数 Datasheet PDF下载

S29GL064M90FFIR10图片预览
型号: S29GL064M90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
START  
Read DQ15–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
No  
DQ5 = 1?  
Yes  
Read DQ15–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
PASS  
FAIL  
Notes:  
1. VA = Valid address for programming. During a sector  
erase operation, a valid address is any sector address  
within the sector being erased. During chip erase, a  
valid address is any non-protected sector address.  
2. DQ7 should be rechecked even if DQ5 = “1” because  
DQ7 may change simultaneously with DQ5.  
Figure 7. Data# Polling Algorithm  
RY/BY#: Ready/Busy#  
The RY/BY# is a dedicated, open-drain output pin which indicates whether an  
Embedded Algorithm is in progress or complete. The RY/BY# status is valid after  
the rising edge of the final WE# pulse in the command sequence. Since RY/BY#  
is an open-drain output, several RY/BY# pins can be tied together in parallel with  
a pull-up resistor to V  
.
CC  
If the output is low (Busy), the device is actively erasing or programming. (This  
includes programming in the Erase Suspend mode.) If the output is high (Ready),  
the device is in the read mode, the standby mode, or in the erase-suspend-read  
mode. Table 33 shows the outputs for RY/BY#.  
116  
S29GLxxxM MirrorBitTM Flash Family  
S29GLxxxM_00A5 April 30, 2004  
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