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S29CD032G0JFAN012 参数 Datasheet PDF下载

S29CD032G0JFAN012图片预览
型号: S29CD032G0JFAN012
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS 2.5伏只突发模式下的双启动,同步读/写FLASH MEMORY [CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY]
分类和应用:
文件页数/大小: 93 页 / 1616 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
Table 15. CFI System Interface String  
Addresses  
Data  
Description  
V
Min. (write/erase)  
CC  
1Bh  
0023h  
DQ7–DQ4: volts, DQ3–DQ0: 100 millivolt  
V
Max. (write/erase)  
CC  
1Ch  
0027h  
DQ7–DQ4: volts, DQ3–DQ0: 100 millivolt  
1Dh  
1Eh  
1Fh  
0000h  
0000h  
0004h  
V
Min. voltage (00h = no V pin present)  
PP  
PP  
V
Max. voltage (00h = no V pin present)  
PP  
PP  
Typical timeout per single word/doubleword program 2N µs  
Typical timeout for Min. size buffer program 2N µs (00h = not  
supported)  
20h  
0000h  
21h  
22h  
23h  
24h  
25h  
26h  
0009h  
0000h  
0005h  
0000h  
0007h  
0000h  
Typical timeout per individual block erase 2N ms  
Typical timeout for full chip erase 2N ms (00h = not supported)  
Max. timeout for word/doubleword program 2N times typical  
Max. timeout for buffer write 2N times typical  
Max. timeout per individual block erase 2N times typical  
Max. timeout for full chip erase 2N times typical (00h = not supported)  
42  
S29CD032G  
30606B0 March 22, 2004  
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