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S29AL032D70BFI030 参数 Datasheet PDF下载

S29AL032D70BFI030图片预览
型号: S29AL032D70BFI030
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位CMOS 3.0伏只快闪记忆体 [32 Megabit CMOS 3.0 Volt-only Flash Memory]
分类和应用:
文件页数/大小: 69 页 / 1731 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
Figure 18, on page 44 shows the outputs for Data# Polling on DQ7. Figure 7, on page 43 shows  
the Data# Polling algorithm.  
START  
Read DQ7–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
No  
DQ5 = 1?  
Yes  
Read DQ7–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
PASS  
FAIL  
Notes:  
1. VA = Valid address for programming. During a sector  
erase operation, a valid address is an address within  
any sector selected for erasure. During chip erase, a  
valid address is any non-protected sector address.  
2. DQ7 should be rechecked even if DQ5 = 1 because  
DQ7 may change simultaneously with DQ5.  
Figure 6. Data# Polling Algorithm  
RY/BY#: Ready/Busy#  
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm  
is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse  
in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be  
tied together in parallel with a pull-up resistor to V  
.
CC  
40  
S29AL032D  
S29AL032D_00_A3 June 13, 2005