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S29AL016M10BFI020 参数 Datasheet PDF下载

S29AL016M10BFI020图片预览
型号: S29AL016M10BFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8位/ IMX 16位), 3.0伏只引导扇区闪存 [16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY]
分类和应用: 闪存内存集成电路
文件页数/大小: 59 页 / 2056 K
品牌: SPANSION [ SPANSION ]
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General Description  
The S29AL016M is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152  
bytes or 1,048,576 words. The device is offered in a 48-ball Fine-pitch BGA, 64-  
ball Fortified BGA, and 48-pin TSOP packages. The word-wide data (x16) appears  
on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. The device re-  
quires only a single 3.0 volt power supply for both read and write functions,  
designed to be programmed in-system with the standard system 3.0 volt V sup-  
CC  
ply. The device can also be programmed in standard EPROM programmers.  
The device offers access times of 90 and 100 ns. To eliminate bus contention the  
device has separate chip enable (CE#), write enable (WE#) and output enable  
(OE#) controls.  
The device is entirely command set compatible with the JEDEC single-power-  
supply Flash standard. Commands are written to the device using standard  
microprocessor write timing. Write cycles also internally latch addresses and data  
needed for the programming and erase operations.  
The sector erase architecture allows memory sectors to be erased and repro-  
grammed without affecting the data contents of other sectors. The device is fully  
erased when shipped from the factory.  
Device programming and erasure are initiated through command sequences.  
Once a program or erase operation has begun, the host system need only poll  
the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/  
Busy# (RY/BY#) output to determine whether the operation is complete. To  
facilitate programming, an Unlock Bypass mode reduces command sequence  
overhead by requiring only two write cycles to program data instead of four.  
Hardware data protection measures include a low V detector that automati-  
CC  
cally inhibits write operations during power transitions. The hardware sector  
protection feature disables both program and erase operations in any combina-  
tion of sectors of memory. This can be achieved in-system or via programming  
equipment.  
The Erase Suspend/Erase Resume feature allows the host system to pause an  
erase operation in a given sector to read or program any other sector and then  
complete the erase operation. The Program Suspend/Program Resume fea-  
ture enables the host system to pause a program operation in a given sector to  
read any other sector and then complete the program operation.  
The hardware RESET# pin terminates any operation in progress and resets the  
device, after which it is then ready for a new operation. The RESET# pin may be  
tied to the system reset circuitry. A system reset would thus also reset the de-  
vice, enabling the host system to read boot-up firmware from the Flash memory  
device.  
The device reduces power consumption in the standby mode when it detects  
specific voltage levels on CE# and RESET#, or when addresses have been stable  
for a specified period of time.  
The SecSi(Secured Silicon) Sector provides a 128-word/256-byte area for  
code or data that can be permanently protected. Once this sector is protected, no  
further changes within the sector can occur.  
MirrorBit flash technology combines years of Flash memory manufacturing expe-  
rience to produce the highest levels of quality, reliability and cost effectiveness.  
The device electrically erases all bits within a sector simultaneously via hot-hole  
assisted erase. The data is programmed using hot electron injection.  
3
S29AL016M  
S29AL016M_00A4 April 21, 2004