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S29AL004D70MFI013 参数 Datasheet PDF下载

S29AL004D70MFI013图片预览
型号: S29AL004D70MFI013
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512 Kx的8位/ 256千×16位) CMOS 3.0伏只引导扇区闪存 [4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 55 页 / 1488 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
AC Characteristics  
555 for program  
PA for program  
2AA for erase  
SA for sector erase  
555 for chip erase  
Data# Polling  
Addresses  
PA  
tWC  
tWH  
tAS  
tAH  
WE#  
OE#  
tGHEL  
tWHWH1 or 2  
tCP  
CE#  
Data  
tWS  
tCPH  
tDS  
tBUSY  
tDH  
DQ7#  
DOUT  
tRH  
A0 for program  
55 for erase  
PD for program  
30 for sector erase  
10 for chip erase  
RESET#  
RY/BY#  
Notes:  
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data  
written to the device.  
2. Figure indicates the last two bus cycles of command sequence.  
3. Word mode address used as an example.  
Figure 24. Alternate CE# Controlled Write Operation Timings  
Table 15. Erase And Programming Performance  
Parameter  
Typ (Note 1)  
Max (Note 2)  
Unit  
s
Comments  
Sector Erase Time  
Chip Erase Time  
0.7  
11  
5
10  
Excludes 00h programming  
prior to erasure  
s
Byte Programming Time  
Word Programming Time  
150  
210  
12.5  
8.5  
µs  
µs  
s
7
Excludes system level  
overhead (Note 5)  
Byte Mode  
Word Mode  
4.2  
2.9  
Chip Programming Time  
(Note 3)  
s
Notes:  
1. Typical program and erase times assume the following conditions: 25°C, VCC = 3.0 V, 100,000 cycles, checkerboard  
data pattern.  
48  
S29AL004D  
S29AL004D_00_A1 February 18, 2005  
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