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S29AL004D70MFI013 参数 Datasheet PDF下载

S29AL004D70MFI013图片预览
型号: S29AL004D70MFI013
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512 Kx的8位/ 256千×16位) CMOS 3.0伏只引导扇区闪存 [4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 55 页 / 1488 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.  
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most  
bytes program faster than the maximum program times listed.  
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.  
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program  
command. See Table on page 24 for further information on command definitions.  
6. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector  
Table 16. TSOP, SO, And BGA Pin Capacitance  
Parameter  
Symbol  
Parameter Description  
Test Setup  
Package  
TSOP, SO  
BGA  
Typ  
6
Max  
7.5  
5.0  
12  
Unit  
CIN  
Input Capacitance  
VIN = 0  
4.2  
8.5  
5.4  
7.5  
3.9  
TSOP, SO  
BGA  
COUT  
Output Capacitance  
VOUT = 0  
VIN = 0  
pF  
6.5  
9
TSOP, SO  
BGA  
CIN2  
Control Pin Capacitance  
4.7  
Notes:  
1. Sampled, not 100% tested.  
2. Test conditions TA = 25°C, f = 1.0 MHz.  
February 18, 2005 S29AL004D_00_A1  
S29AL004D  
49  
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