MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
■ AC CHARACTERISTICS
• Read Only Operations Characteristics
Symbol
JEDEC Standard
Value
-70*2
Test
-55*1
-90*2
Parameter
Unit
Setup
Min Max Min Max Min Max
55 70 90
Read Cycle Time
tAVAV
tAVQV
tRC
—
ns
ns
CE = VIL
OE = VIL
Address to Output Delay
tACC
55
70
90
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
tELQV
tGLQV
tEHQZ
tGHQZ
tCE
tOE
tDF
tDF
OE = VIL
55
30
15
15
70
30
20
20
90
40
20
20
ns
ns
ns
ns
—
—
—
Output Hold Time From
Addresses, CE or OE,
Whichever Occurs First
tAXQX
tOH
—
0
0
0
ns
RESET Pin Low to Read Mode
—
—
tREADY
—
—
20
5
20
5
20
5
µs
tELFL
tELFH
CE to BYTE Switching Low or
High
ns
*1 : Test Conditions:
*2 : Test Conditions:
Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V or 3.0 V
Timing measurement reference level
Input: 1.5 V
Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.45 V or 2.4 V
Timing measurement reference level
Input: 0.8 V and 2.0 V
Output: 1.5 V
Output: 0.8 V and 2.0 V
5.0 V
Diode = 1N3064
or Equivalent
2.7 kΩ
Device
Under
Test
6.2 kΩ
CL
Diode = 1N3064
or Equivalent
Notes : • CL = 30 pF including jig capacitance (MBM29F800TA/BA-55)
• CL = 100 pF including jig capacitance (MBM29F800TA/BA-70/-90)
Test Conditions
25
SPANSION [ SPANSION ]
